Catégorie de recherche
Problème de recherche ?

Applications of Silicon-Germanium Heterostructure Devices

Auteur: Maiti, C.K (Indian Institute of Technology, Kharagpur, India)
Editeur: Taylor & Francis Ltd
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.
Sur commande
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.
ISBN / EAN 9780750307239
Auteur Maiti, C.K (Indian Institute of Technology, Kharagpur, India)
Editeur Taylor & Francis Ltd